The Weibull distributions of RHIGH and RLOW for all devices in the 1 Kb array with cycling numbers are shown in Fig. 7. The endurances of these devices can exceed more than 106 times by a pulse width of 40 ns under fixed operation voltage and current. Compared to the initial resistance distribution, the dispersion of RHIGH and RLOW become more and more fluctuant with increasing cycling number. Soft errors are found in some devices of the 1 Kb array during the SET or RESET process. Hence, some devices can't exhibit stable switching during the endurance test. Two novel verification methods for RRAM are proposed to effectively narrow down the fluctuation of RHIGH and RLOW. The results suggest that the devices with soft errors can be reactivated by some new operation methods.
fig7이 c번 입니다. 이번에 리뷰 논문을 발표하기로 했는데 그래프가 해석이 안됩니다..ㅠㅠ 한번만 도와주세요 추가로 그래프가 어떻게 나와야 좋은 결과인지도 알려주실 선생님 계신가요?